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Energy Materials

Structural and electronic properties of CdTe1-xSex films and their application in solar cells

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Pages 683-692 | Received 01 Mar 2018, Accepted 03 Jul 2018, Published online: 01 Oct 2018

Figures & data

Figure 1. X-ray diffractograms of CdTe1-xSex thin films on glass substrate. The symbols indicate the CdTe reference from [Citation18] (PDF number 01–070–8041).

Figure 1. X-ray diffractograms of CdTe1-xSex thin films on glass substrate. The symbols indicate the CdTe reference from [Citation18] (PDF number 01–070–8041).

Figure 2. Splitting of the 311 Bragg reflex of CdTe1-xSex thin films on glass substrate. The reference value for the CdTe peak is from [Citation18].

Figure 2. Splitting of the 311 Bragg reflex of CdTe1-xSex thin films on glass substrate. The reference value for the CdTe peak is from [Citation18].

Figure 3. Lattice constant of CdTe1-xSex thin films on glass substrate. The value for zinc blende CdSe (x = 1) was taken from literature [Citation23].

Figure 3. Lattice constant of CdTe1-xSex thin films on glass substrate. The value for zinc blende CdSe (x = 1) was taken from literature [Citation23].

Figure 4. Tauc plots of CdTe1-xSex thin films on glass substrate with linear fitting to extract the band gap.

Figure 4. Tauc plots of CdTe1-xSex thin films on glass substrate with linear fitting to extract the band gap.

Figure 5. Band gap of CdTe1-xSex thin films on glass substrate determined from the Tauc plot. The band gap value for the pure CdSe (x = 1) was taken from literature [Citation25].

Figure 5. Band gap of CdTe1-xSex thin films on glass substrate determined from the Tauc plot. The band gap value for the pure CdSe (x = 1) was taken from literature [Citation25].

Figure 6. Results from resistivity measurements with the transmission line method at 25 °C (a) and from Hall effect measurements at 70 °C (b–d) of CdTe1-xSex thin films on glass substrate with Cu doping variations for x = 0, 0.1, 0.2 and with an additional x = 0.08 sample with lower Cu doping.

Figure 6. Results from resistivity measurements with the transmission line method at 25 °C (a) and from Hall effect measurements at 70 °C (b–d) of CdTe1-xSex thin films on glass substrate with Cu doping variations for x = 0, 0.1, 0.2 and with an additional x = 0.08 sample with lower Cu doping.

Table 1. Performance parameters of CdTe solar cells with and without CdTe1-xSex grading of the absorber towards the CdS window layer, and with varying CdS window layer thicknesses.

Figure 7. JV performance parameters of CdTe solar cells with and without CdTe1-xSex grading of the absorber towards the CdS window layer, and with varying CdS window layer thicknesses.

Figure 7. JV performance parameters of CdTe solar cells with and without CdTe1-xSex grading of the absorber towards the CdS window layer, and with varying CdS window layer thicknesses.

Figure 8. Current-voltage curves of CdTe solar cells with and without CdTe1-xSex grading of the absorber towards the CdS window layer, and with varying CdS window layer thicknesses.

Figure 8. Current-voltage curves of CdTe solar cells with and without CdTe1-xSex grading of the absorber towards the CdS window layer, and with varying CdS window layer thicknesses.

Figure 9. External quantum efficiency of CdTe solar cells with and without CdTe1-xSex grading of the absorber towards the CdS window layer, and with varying CdS window layer thicknesses.

Figure 9. External quantum efficiency of CdTe solar cells with and without CdTe1-xSex grading of the absorber towards the CdS window layer, and with varying CdS window layer thicknesses.