Figures & data
Figure 1. (a) Crystal structure, (b) band structure and (c) total density of states (DOS) of PbBi2Te4 obtained by the generalized gradient approximation with spin-orbit coupling.
Figure 2. Optical image of the sample space of DAC with boron-doped diamond electrodes.
Figure 3. Powder XRD pattern of pulverized PbBi2Te4 single crystal.
Figure 4. High-resolution XPS spectra of (a) Pb 4f, (b) Bi 4f, and (c) Te 3d core levels in PbBi2Te4 single crystal.
Figure 5. Temperature dependence of thermoelectric properties in PbBi2Te4 and SnBi2Se4 under ambient pressure. (a) resistivity, (b) Seebeck coefficient, (c) carrier concentration (inset is a magnetic field dependence of Hall voltage at room temperature), (d) thermal conductivity, (e) power factor, and (f) figure of merit ZT.
Figure 6. Temperature dependence of resistance in PbBi2Te4 under various pressures, (a) 1.0–13.3 GPa, (b) 13.3–50.8 GPa.
Figure 7. Temperature dependence of resistance around superconducting transitions in PbBi2Te4 under various pressures.
Figure 8. Temperature dependence of resistance of PbBi2Te4 in specified magnetic field, under pressure of (a) 13.3 GPa or (b) 21.7 GPa. (c) Temperature dependence of Hc2//ab values at 13.3 GPa and 21.7 GPa.
Figure 9. Resistance-pressure phase diagram of PbBi2Te4.
