Abstract
Commercial purity aluminium sheets were severely plastic deformed by accumulative roll bonding (ARB). Changes in electrical resistivity at 77 K and microstructure during the ARB process were traced up to 12 cycles, which corresponded to an equivalent strain of 10. The resistivity at 77 K increased with increasing number of ARB cycles, then saturated after about the sixth ARB cycle with a maximum increment of resistivity from starting material of about 1.1 nΩ m. Since lattice defects affect the resistivity of metals, the internal dislocation density and the density of grain boundaries were evaluated from scanning transmission electron microscopy images using Ham's method and grain boundary maps obtained from electron back-scattering diffraction, respectively. The relationship between the change in resistivity and the lattice defects is discussed.
Acknowledgements
The STEM observation was supported by the Nanotechnology Support Project of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. Authors would like to thank the assistance by K. Ura, A. Goto, Y. Marutani, and Y. Murata for the resistivity measurement in Kansai University.
Notes
Present affiliation: Department of Materials Science and Engineering, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226–8502, Japan