Crystallization behaviour of Ge₁₇Sb₂₃Se₆₀ thin films

Abstract

The crystallization behaviour of as-prepared and nucleated Ge₁₇Sb₂₃Se₆₀ thin films was studied by means of differential scanning calorimetry, X-ray diffraction analysis and scanning electron microscopy. Detailed analysis of the non-isothermal crystal growth kinetics was performed; the apparent activation energy, kinetic model and value of the pre-exponential factor were determined. The kinetic behaviour was found to be surprisingly close to the ideal Johnson–Mehl–Avrami nucleation-growth process, with the only non-ideality being the prolonged peak end tail (which may be a specificity associated with certain thicknesses of thin layers). This corresponds to the initiation of crystal growth in agreement with the classical nucleation theory, with the amount of mechanical defects and strains being negligible. The value of the kinetic parameter suggests two-dimensional crystal growth, which is consistent with the idea of macroscopic crystallites growing in a sterically restricted thin layer. A similar conclusion can be made on the basis of direct microscopic observation of the crystallites’ morphology.

Keywords:

• crystallization kinetics
• DSC
• thin film
• JMA model
• Ge-Sb-Se

PACS:

• 64.70.ph
• 81.10.Aj