Contrast analysis of Shockley partial dislocations in 4H-SiC observed by synchrotron Berg–Barrett X-ray topography

Abstract

Shockley partial dislocations in 4H-SiC were observed using monochromatic synchrotron X-ray topography with a grazing-incidence Bragg-case geometry, that is, Berg–Barrett topography. The contrast of partial dislocations at the edges of Shockley-type stacking faults is discussed in terms of whether they have C- or Si-core edge components, or screw components. The dissociated state of basal-plane dislocation is discussed on a basis of the stacking sequence for basal-planes in the 4H-SiC crystal structure. It is expected that the results obtained in this study will be useful for characterizing Shockley-type stacking faults in Berg–Barrett topography.

Keywords:

• 4H-SiC
• dislocations
• Shockley-type stacking faults
• X-ray topography
• grazing incidence
• Berg–Barrett

Acknowledgements

This work was supported by “Novel Semiconductor Power Electronics Realizing Low Carbon Emission Society Project” by the New Energy and Industrial Technology Development Organization (NEDO) of Japan.