Interplay between Intrinsic and Contact Phenomena in Carbon Nanotube Devices: From Exponential Magnetoresistance to Chemical Sensing

Abstract

We present experimental data that prove the significant role of contact phenomena in carbon nanotube-based devices. We studied the effect of linear bandgap opening in an axial magnetic field on conductance of carbon nanotubes embedded into field-effect devices. This work resulted in the creation of a compact computational procedure allowing for modeling transport characteristics of carbon nanotube-based field-effect transistors. This procedure is proved to be a good tool for exploring gas sensitivity of carbon nanotube devices.

Keywords:

• Carbon nanotubes
• magnetoresistance
• field-effect transistor
• electronic properties
• chemical sensors

Acknowledgments

This work was supported by the Russian Foundation for Basic Research (Grant No 10-02-92671-NNF_a) and the Russian ministry of Science and education (Grant No 16.513.12.3004)