Low voltage flexible high performance organic field-effect transistor and its application for ultraviolet light detectors

ABSTRACT

A novel highly π-extended heteroarene Benzo[1,2-b:4,5-b’]di(naphtho[1,2-d]thiophene) (DBTBT) was used for organic field-effect transistors (OFETs). The mobilities of OFET were greatly improved from 0.34–0.58 cm²V⁻¹s⁻¹ to 1.02–1.75 cm²V⁻¹s⁻¹ by morphology tuning through 2 steps’ controlling substrate temperature. More importantly, the OFETs showed a good ambient stability in 30 days measurements. The flexible OFET arrays were prepared on polyethylene terephthalate substrate with octadecyl trichlorosilane modified polymethylsilsesquioxane/polyacrylonitrile gate dielectrics and demonstrated a 100% yield. Further, this flexible cell was used for ultraviolet light detection, which showed good ability of detecting low power light (such as λ = 254 nm, 7 μW/cm²).

KEYWORDS:

• Low voltage
• field-effect transistor
• flexile
• ultraviolet
• light detectors

Disclosure Statement

No potential conflict of interest was reported by the author(s).

Supplementary Data

Supplemental data for this article can be accessed online at https://doi.org/10.1080/1539445X.2024.2358004.

Additional information

Funding

The work was supported by the Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences.