Abstract
Using vacuum thermal evaporation combined with post-deposition annealing, we obtained p-type copper oxide films with a hole concentration on the order of 1016 cm−3 and Hall mobility of over 5 cm2 V−1 s−1. These properties are in the range that can be used for an active layer of p-channel thin film transistors. We used air thermal annealing to convert n-type conduction of as-deposited films to p-type conduction, and determined that vacuum thermal annealing did not change the n-type conductivity of the as-deposited films.
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