Studies on Pressure-Dependent Electrical Resistivity of MoSe_2−xTe_x Single Crystals

Abstract

Electrical resistivity of 2H-MoSe_2−xTe_x (x = 0.25, 0.5, 1, 1.5, 1.75) single crystals grown by chemical vapor transport technique have been measured in the pressure range 0.1–8 GPa. It is noticed that all these materials show a decrease in resistivity with increase in applied hydrostatic pressure. The materials become more and more metallic in nature as the pressure increases. The obtained results have been discussed in detail on the basis of energy band theory of semiconductors.

Keywords:

• CVT method
• electrical resistivity
• high pressure
• powder X-ray diffraction
• single crystal
• TMDCs

Acknowledgment

The author D. N. Bhavsar is thankful to the DST for selection on INSPIRE Fellowship and for providing necessary financial support to carry out this work as a full-time Ph.D. student.