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Molecular Crystals and Liquid Crystals Volume 600, 2014 - Issue 1: KJF International Conference on Organic Materials for Electronics and Photonics (KJF 2013)
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Original Articles

Analysis of Structural and Electrical Properties of Solution-Processed Zinc Oxide Films for Thin-Film Transistor Application

Jin-Hyuk BaeSchool of Electronics Engineering, Kyungpook National University, Daegu, Republic of Korea
,
Jae Eun HwangDepartment of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Youngin, Republic of Korea
,
Hong Doo KimDepartment of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Youngin, Republic of Korea
,
Xue ZhangDepartment of Electronic Engineering, Hallym University, Chuncheon, Republic of Korea
&
Jaehoon ParkDepartment of Electronic Engineering, Hallym University, Chuncheon, Republic of KoreaCorrespondence[email protected]
Pages 28-34 | Published online: 17 Nov 2014
 
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Abstract

We investigated the electrical properties of solution-processed zinc oxide (ZnO) thin-film transistors (TFTs) with varying the size of ZnO crystallites in the film. The TFTs having the bead-shaped ZnO crystallites with the average diameter of 2 μm apparently operated in depletion mode, whereas the devices exhibited an accumulation operation when the crystallite size of ZnO reduced to sub-micron range. Considering the difference between bulk and channel electrical conductivities in solution-processed ZnO TFTs, these results are explained with the interplay between the crystallite size of ZnO and the electrical conduction in the TFT.

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