Abstract
We fabricated a a-SiC:H / a-SiGe:H / a-Si:H thin film solar cell by adjusting CH4 flow rate in order to absorb long wavelength of solar spectrum without stacked structures such as triple junctions. The a-SiC:H, a-SiGe:H and a-Si:H layers with sheet resistance 7∼8 ohm/sq were deposited on indium tin oxide (ITO) glass by 13.56 MHz radical-assisted plasma-enhanced chemical vapor deposition (RA-PECVD). The working pressure and substrate temperature were 750 mTorr and 250°C, respectively. The a-SiC:H films for p-layer thickness of 300 Å were deposited using 10% CH4 diluted in H2. The thickness of a-SiGe:H for i-layer corresponded to 2000 Å. The n-layer was fabricated using 1% PH3 in diluted H2. The optical properties of these films were measured by UV-VIS spectrophotometer. The thickness of the film was estimated by FE-SEM were observation. The various values of Jsc, Voc, FF and conversion efficiency were evaluated by the solar simulator.
Funding
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2012R1A1A2007685), and the Kyungpook National University Research Fund, 2012.