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Molecular Crystals and Liquid Crystals Volume 618, 2015 - Issue 1: 18th International Symposium on Advanced Display Materials and Devices (ADMD 2014)
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Thin Film

Asymmetric Ferroelectric Switching Based on an Al/PVDF Langmuir-Blodgett Nanofilm/PEDOT:PSS/Al Device

Huie ZhuInstitute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Aoba-ku, Sendai, Japan
,
Shunsuke YamamotoInstitute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Aoba-ku, Sendai, Japan
,
Jun MatsuiDepartment of Materials and Biological Chemistry, Faculty of Science, Yamagata University, Yamagata, Japan
,
Tokuji MiyashitaInstitute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Aoba-ku, Sendai, Japan
&
Masaya MitsuishiInstitute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Aoba-ku, Sendai, JapanCorrespondence[email protected]
Pages 89-94 | Published online: 07 Oct 2015
 
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Abstract

We prepared highly oriented ferroelectric poly(vinylidene fluoride) (PVDF) Langmuir–Blodgett (LB) nanofilms by an assistance of amphiphilic poly(N-dodecylacrylamide) (pDDA) nanosheets. In the nanofilms, semi-crystalline PVDF contains abundant polar β crystals, a parallel packing of PVDF all-trans molecules. Combing semi-conductive PEDOT:PSS and ferroelectric PVDF LB nanofilms, we fabricated a sandwiched capacitor (Al/PVDF LB nanofilm/PEDOT:PSS/Al). The capacitor shows asymmetric hysteresis curves and high remanent polarization values.

Acknowledgments

This work was partially supported by a Grant-in-aid for Scientific Research (B) (24350112) from the Japan Society for the Promotion of Science (JSPS) and Innovative Areas (25102504) from the Ministry of Education, Culture, Sports, Science, and Technology in Japan (MEXT). The work was also supported by the Nano-Macro Materials, Devices and System Research Alliance (MEXT).

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