Numerical study on off-current features in an organic transistor by controlling electrode-overlap area

ABSTRACT

We investigate the effect of the source/drain-to-gate electrode overlap area on the off-current features in organic thin-film transistors (OTFTs). For the numerical simulation, we used 2-D Atlas, a device simulator based on a two-dimensional Technology Computer Aided Design (TCAD) software tool provided by Silvaco. Both channel and overlap lengths are varied from 1 μm to 1000 μm. The off-current decreases with increasing channel length, whereas variations in the overlap area show a negligible effect on both on- and off-state currents.

KEYWORDS:

• Numerical Study
• Off-state features
• Thin-film transistor
• Electrode overlap

Acknowledgments

This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2014R1A1A2057057 and 2015R1D1A1A01057942). This work was also supported by the Industrial Strategic technology development program (10052641) funded by the Ministry of Trade, Industry & Energy (MI, Korea).