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Molecular Crystals and Liquid Crystals Volume 651, 2017 - Issue 1: 20th International Symposium on Advanced Display Materials and Devices (ADMD2016)
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Original Articles

Stability enhancement in InGaZnO thin-film transistor with a novel Al2O3/HfO2/Al2O3 as gate insulator

Xingwei DingKey Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai, China;School of Mechatronics and Automation, Shanghai University, Shanghai, China
,
Cunping QinKey Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai, China;School of Mechatronics and Automation, Shanghai University, Shanghai, China
,
Tao XuKey Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai, China
,
Jiantao SongKey Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai, China
,
Jianhua ZhangKey Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai, China;School of Mechatronics and Automation, Shanghai University, Shanghai, ChinaCorrespondence[email protected]
,
Xueyin JiangDepartment of Materials Science, Shanghai University, Shanghai, China
&
Zhilin ZhangKey Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai, China;Department of Materials Science, Shanghai University, Shanghai, China
 show all
Pages 235-242 | Published online: 12 Oct 2017
 
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ABSTRACT

This work reports an efficient route for enhancing the stability of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs). It is clearly observed that the off-current in IGZO-TFT decreases by using a novel Al2O3/HfO2/Al2O3 gate insulator. Temperature-stress measurement were carried out to investigate the stability and the parameters related to activation energy (EA) and density-of-states (DOS). The improved electrical properties are attributed to the suppression of leakage current and a lower trapping density at the channel-insulator interface. The results showed that temperature stability and electrical properties enhancements in a-IGZO thin film transistors can probably be ascribed to the smaller DOS.

Acknowledgement

This work is supported by the Shanghai Sailing Program (17YF1406300), Project of National Post-Doctor Fund (2015M580315) and the National Key Basic Research Program of China (2015CB655005), Science and Technology Commission of Shanghai Municipality Program (14DZ228090).

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