Effect of phosphorus doping on the performance of pin-type a-Si:H thin-film solar cells

ABSTRACT

This article shows the characteristics of pin-type a-Si:H thin-film solar cells with various PH₃ concentrations in the i-layer. A series of phosphorus doped a-Si:H films were fabricated by mixing PH₃ and SiH₄ with H₂ during the i-layer deposition. The concentration of PH₃ was varied in the range of 0–3650 ppm. By phosphorus doping of the i-layer, the properties of the i-layer were changed light doped n layer (n-), and we were able to improve all these electrical parameters (V_oc, J_sc, and FF). Consequently, we achieved a higher conversion efficiency η than in conventional pin-type a-Si:H solar cells with undoped i-layer.

KEYWORDS:

• Conductivity
• H solar cell
• light doping
• PECVD
• phosphorus
• pin-type a-Si