Studies on the fabrication and characteristics of organic photodiode using novel Ga-doped NiO_x as an electron-blocking layer

ABSTRACT

The photodiode converts incident light into a microcurrent that flows when photons of sufficient energy strike the device under reverse bias. In doing so, a leakage current is caused by the reverse bias. In order to decrease the leakage current, buffer layers are introduced as electron- and hole-blocking materials between the photoactive material and electrode. We fabricated an organic photodiode using Ga-doped NiO_x as an electron-blocking layer and investigated the physical effects of Ga doping on the performance of the organic photodiode. Our results showed that this diode exhibited high detectivity of 1.06 × 10¹² Jones.

KEYWORDS:

• Electron-blocking layer
• gallium-doped nickel oxide
• organic photodiode

Additional information

Funding

This work was supported by “Human Resources Program in Energy Technology” of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), granted financial resource from the Ministry of Trade, Industry & Energy, Republic of Korea (No. 20174010201150). This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2017R1D1A1B03028795).