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Abstract
To obtain high transparecy conductive films (TCFs), graphene embedded indium tin oxide (ITO) TCFs (ITO-graphene-ITO) were formed (I-G-I), using ITO sputtering, and the exfoliation/transfer process of chemical vapor deposition (CVD) grown graphene. Compared with ITO-graphene (I-G), I-G-I TCFs showed degradation in transmittance, and in figure of merits(FOM) despite enhanced conductivity. After annealing, both transmittance and conductivity improved; however, were not dependent on the embedded graphene multilayers in the I-G-I structure. From the Raman spectra results, it was possible to investigate degradation of the graphene layers’ 2D structures, caused by sputtering damage which occurred during the deposition of ITO onto the I-G structure.
Acknowledgement
This work was supported by the Industrial Human Resources and Skill Development Program (N0001415, Display Expert Training project for Advanced Display Equipments and Components Engineers) fund by the Ministry of Trade, Industry, and Energy (MOTIE, Korea).