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Articles

Degradation behaviors of InGaN/GaN-based multiple quantum wells blue light-emitting diodes by chip size

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Pages 131-135 | Received 31 Jul 2013, Accepted 01 Nov 2013, Published online: 28 Nov 2013

Figures & data

Figure 1. Image of (a) sample A, (b) sample B, and (c) sample C. The inset images are the top views of the chips.

Figure 1. Image of (a) sample A, (b) sample B, and (c) sample C. The inset images are the top views of the chips.

Figure 2. Relative light output power vs. test time characteristics of the samples.

Figure 2. Relative light output power vs. test time characteristics of the samples.

Figure 3. IV characteristics of (a) sample A, (b) sample B, and (c) sample C by test time.

Figure 3. I−V characteristics of (a) sample A, (b) sample B, and (c) sample C by test time.

Figure 4. Series resistance and ideality factor of (a) sample A, (b) sample B, and (c) sample C by test time.

Figure 4. Series resistance and ideality factor of (a) sample A, (b) sample B, and (c) sample C by test time.

Figure 5. (a) Junction temperature and (b) thermal resistance of the samples by test time.

Figure 5. (a) Junction temperature and (b) thermal resistance of the samples by test time.

Figure 6. FLIR image of sample C at (a) initial, (b) 100 h, (c) 200 h, and (d) 500 h.

Figure 6. FLIR image of sample C at (a) initial, (b) 100 h, (c) 200 h, and (d) 500 h.

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