Recent progress in the development of backplane thin film transistors for information displays

Figures & data

Figure 1. Field-effect mobility trends depending on the process temperature of various thin-film transistors.

Table 1. Recent representative research of n-type metal oxide-based TFTs.

Type	Method	Material	Process temp. (°C)	${\mu }_{FE}$ (cm^2/Vs)	S.S. (V/dec)	Ion/Ioff	Ref.
n-type	Chemical Composition	IGZO	250	74.0	0.13	2.6 × 10^8	[1–5]
		IGZO	200	74.3	0.26	8.9 × 10^8	[6]
		IGZO	250	48.3	0.45	∼ 10^7	[7]
		IGO	700	60.7	0.40	5.1 × 10^9	[8]
		ZnO/IGO	250	63.2	0.26	9.0 × 10^8	[11]
	Crystallization	IGZO	300	54.0	0.3	4.4 × 10^7	[12]
		IGO:H	250	50.6	0.1	–	[13]
		In2O3:H	250	142	0.41	–	[14]
		IGO	200	56	0.1	–	[15]
		IGTO	400	116.5	0.134	3.3 × 10^9	[16]
	Metal Capping Layer	IGZO	300	54.0	0.30	4.4 × 10^7	[12]
		IGZO	430	46.7	–	4.9 × 10^8	[17]
		SZTO	500	147.6	0.32	6.2 × 10^8	[18]
		SZTO	500	37.8	0.28	3.0 × 10^9	[19]
		IZO	300	61.0	0.11	2.3 × 10^8	[20]
		ZnON	250	89.4	0.33	8.6 × 10^8	[21]
		ZTO	500	70.8	0.19	2.0 × 10^8	[22]
		IGZO	350	105.7	0.12	9.7 × 10^8	[23]
		ZBTO	350	153	0.37	∼ 10^9	[24]

Table 2. Recent representative research of p-type metal oxide-based TFTs.

Type	Material	Process temp. (°C)	${\mu }_{FE}$ (cm^2/Vs)	S.S. (V/dec)	Ion/Ioff	Ref.
p-type	SnO	200	4.4	0.526	2 × 10^5	[25]
	SnOX	300	6.0	4.6	2.7 × 10^2	[26]
	Ga:Cu2O	800	0.74	7.72	1.22 × 10^4	[27]
	CuOX	300	5.64	0.75	1.79 × 10^5	[28]
	NiOX	300	∼25	0.7	∼ 10^5	[29]
	Li:NiOX	150	1.69	0.21	8 × 10^6	[30]
	Cu:NiO	150	1.53	0.13	∼ 10^4	[31]
	β-TeO2	270	232	0.103	> 10^6	[32]
	Te	−80	35	0.108	∼10^4	[33]
	Te	150	30.9	6.5	5.8 × 10^5	[34]

Figure 2. The field effect mobility trends of MHPs TFTs for different chemical compositions.

Table 3. Recent progress of MHPs TFTs.

Year	Materials	Geometry	Substrate	Source Drain	Insulator	μFE (cm^2/V^−1s^−1)	Ion/Ioff	Ref
2016	PEA2SnI4	TGTC	Si	Au/MoO3	NH3I-SAM	12	10^6	[49]
2017	MAPbI3	BGBC	Si	Au	HfO2	1.05	10^4	[50]
	CsPbBr3	TGBC	Glass	Au	PMMA	0.26	10^4	[51]
2018	MAPbI3	BGTC	Si	Au/MoOx	SiO2	7.47	10^5	[52]
	MAPbBr3	BGBC	Si	Au	SiO2	3.6	10^5	[53]
	MAPbI3-xClx	BGTC	Si	Au	SiO2	10	10^3–10^4	[49]
2019	MAPbI3	BGBC	Si	Cr/Au	SiO2	15	10^6	[54]
	PEA2SnI4	BGTC	Si	Al/MoOx	SiO2	50	10^6	[55]
	(PEA)2CsSn2I7	BGBC	Si	Cr/Au	SiO2	11.6		[56]
	CsPbI3 Nanowire	BGTC	Si	Ti/Au	SiO2	3.05	10^4–10^5	[57]
	CsPbBr3 Nanowire	BGTC	Si	Ti/Au	SiO2	2.17	10^4–10^5	[57]
	CsPbCl3 Nanowire	BGTC	Si	Ti/Au	SiO2	1.06	10^4–10^5	[57]
2020	MAPbI3	BGTC	Si	Au/MoO3	Al2O3	21.41	10^4	[58]
	CsPbBr3/MEH-PPV	BGBC	Si	Au/Al	SiO2	9	10^6	[59]
	PEA2SnI4	BGTC	Si	Au	SiO2	4.11	10^6	[60]
	RbCsFAMAPbI3	BGTC	Glass	Au/Cr	Cytop	0.5	10^3	[61]
2021	PEA2MA5Pb6I19	BGTC	Si	Au/MoO3	SiO2	3.9	10^4	[62]
	FASnI3	BGBC	Si	Au	SiO2	0.21	10^4	[63]
2022	CsSnI3	BGTC	Si	Au	SiO2	51.4	3 × 10^8	[64]
	MASn(IxClyBr1-x-y)3	BGTC	Si	Au	HfO2	19.6	10^7	[46]
	MASn(IxCl1-x)3	BGTC	Si	Au	HfO2	9.5	10^7	[46]
	MASn(IxBr1-x)3	BGTC	Si	Au	HfO2	4.3	10^6	[46]
	MASnI3	BGTC	Si	Au	HfO2	1.3	10^6	[46]
	5 mol% SnI4 doped PEA2SnI4	BGBC	Si	Au	SiO2	0.68	10^5	[65]
	Cs2AgBiBr6	BGBC	Si	Au	SiO2	0.29	–	[48]

Figure 3. Contact resistance trends of 2D TMDCs based on (a) contact strategy, and (b) type of transistor.

Table 4. Recent progress of TMDCs TFTs.

	Channel	Deposition			S.S.	Ion/Ioff	Rc	Ion
Year	materials (thickness)	method	Strategy	${\mu }_{FE}$ (cm^2/Vs)	(V/dec)	Ion/Ioff	(kΩ·μm)	(μA/μm)	Ref
2016	MoS2(2-3L)	Mechanical exfoliation	Au UHV	20 (electrons)	–	–	2	75	[44]
2017	MoS2(3L)	CVD	-	-	–	–	2.9	0.8	[49]
2018	MoS2(4-20 nm)	Mechanical exfoliation	Transferring metal film	260 (electrons) 175 (holes)		10^6 10^6	-	∼ 660 ∼ 210	[49]
	MoS2(20 nm)	Mechanical exfoliation	Molecular doping	-	–	–	25.2	50	[49]
2019	MoS2(3L)	CVD	Edge contact	-	–	–	205	0.8	[49]
	MoS2(1L)	CVD	Graphene/Ag contact	35 (electrons)	–	∼ 10^8	115	-	[49]
	WSe2(2L)	Mechanical exfoliation	Transferred via contact	160 (holes)	0.064	10^6	3.5	∼ 50	[49]
	MoS2(1L)	Mechanical exfoliation	van der Waals In/Au contact	167 (electrons)	–	10^6	0.8	196	[49]
2021	MoS2(1L)	CVD	–	26 (electrons)	0.335	10^7	9.2	54	[49]
	WS2(1L)	CVD		33 (electrons)	0.443	10^7	29.2	13
	MoS2(1L)	CVD	Bi/Au contact	21 (electrons)	–	10^8	0.123	∼ 1000	[49]
	WSe2(1L)	CVD		17 (holes)		10^8	100 -1000	∼ 300
2023	MoS2(1L)	CVD	Sb/Au contact	∼70 (electrons)	∼ 0.250	∼ 10^8	0.209	∼550	[49]

J. Sheng, T. Hong, H.-M. Lee, K. Kim, M. Sasase, J. Kim, H. Hosono, and J.-S. Park, ACS Appl. Mater. Interfaces 11, 40300 (2019).

 PubMed Web of Science ®Google Scholar

M.H. Cho, M.J. Kim, H. Seul, P.S. Yun, J.U. Bae, K.-S. Park, and J.K. Jeong, J. Inf. Displ. 20, 73 (2019).

 Google Scholar

H.J. Yang, H.J. Seul, M.J. Kim, Y. Kim, H.C. Cho, M.H. Cho, Y.H. Song, H. Yang, and J.K. Jeong, ACS Appl. Mater. Interfaces 12, 52937 (2020).

 PubMed Web of Science ®Google Scholar

H.J. Seul, M.J. Kim, H.J. Yang, M.H. Cho, M.H. Cho, W.-B. Song, and J.K. Jeong, ACS Appl. Mater. Interfaces 12, 33887 (2020).

 PubMed Web of Science ®Google Scholar

Y. Shin, S.T. Kim, K. Kim, M.Y. Kim, S. Oh, and J.K. Jeong, Sci. Rep. 7, 1 (2017).

 PubMed Web of Science ®Google Scholar

M. Furuta, K. Shimpo, T. Kataoka, D. Tanaka, T. Matsumura, Y. Magari, R. Velichko, D. Sasaki, E. Kawashima, and Y. Tsuruma, presented at SID Symposium Digest of Technical Papers 2021.

 Google Scholar

Y. Magari, T. Kataoka, W. Yeh, and M. Furuta, Nat. Commun. 13, 1078 (2022).

 PubMedGoogle Scholar

H.J. Park, T. Kim, M.J. Kim, H. Lee, J.H. Lim, and J.K. Jeong, Ceram. Int. 48, 12806 (2022).

 Web of Science ®Google Scholar

B.K. Kim, N. On, C.H. Choi, M.J. Kim, S. Kang, J.H. Lim, and J.K. Jeong, IEEE Electron Device Lett. 42, 347 (2021).

 Web of Science ®Google Scholar

K.T. Kim, J. Kim, Y.-H. Kim, and S.K. Park, IEEE Electron Device Lett. 35, 850 (2014).

 Web of Science ®Google Scholar

J.Y. Choi, S. Kim, D.H. Kim, and S.Y. Lee, Thin Solid Films 594, 293 (2015).

 Web of Science ®Google Scholar

B.H. Lee, A. Sohn, S. Kim, and S.Y. Lee, Sci. Rep. 9, 1 (2019).

 PubMedGoogle Scholar

H. Ji, A.Y. Hwang, C.K. Lee, P.S. Yun, J.U. Bae, K.-S. Park, and J.K. Jeong, IEEE Trans. Electron Devices 62, 1195 (2015).

 Web of Science ®Google Scholar

T. Kim, M.J. Kim, J. Lee, and J.K. Jeong, ACS Appl. Mater. Interfaces 11, 22501 (2019).

 PubMed Web of Science ®Google Scholar

S.T. Kim, Y. Shin, P.S. Yun, J.U. Bae, I.J. Chung, and J.K. Jeong, Electron. Mater. Lett. 13, 406 (2017).

 Web of Science ®Google Scholar

H.W. Zan, C.C. Yeh, H.F. Meng, C.C. Tsai, and L.H. Chen, Adv. Mater. 24, 3509 (2012).

 PubMed Web of Science ®Google Scholar

J.-M. Park, H.-D. Kim, H. Joh, S.C. Jang, K. Park, Y.C. Park, H.-H. Nahm, Y.-H. Kim, S. Jeon, and H.-S. Kim, NPG Asia Mater. 12, 1 (2020).

 Google Scholar

T.J. Yen, A. Chin, and V. Gritsenko, Nanomaterials 11, 92 (2021).

 Google Scholar

H.-M. Kim, S.-H. Choi, H.J. Jeong, J.-H. Lee, J. Kim, and J.-S. Park, ACS Appl. Mater. Interfaces 13, 30818 (2021).

 PubMed Web of Science ®Google Scholar

J.H. Bae, J.H. Lee, S.P. Park, T.S. Jung, H.J. Kim, D. Kim, S.-W. Lee, K.-S. Park, S. Yoon, and I. Kang, ACS Appl. Mater. Interfaces 12, 38350 (2020).

 PubMed Web of Science ®Google Scholar

W. Maeng, S.-H. Lee, J.-D. Kwon, J. Park, and J.-S. Park, Ceram. Int. 42, 5517 (2016).

 Web of Science ®Google Scholar

F. Shan, A. Liu, H. Zhu, W. Kong, J. Liu, B. Shin, E. Fortunato, R. Martins, and G. Liu, J. Mater. Chem. C 4, 9438 (2016).

 Web of Science ®Google Scholar

J. Yang, B. Wang, Y. Zhang, X. Ding, and J. Zhang, J. Mater. Chem. C 6, 12584 (2018).

 Web of Science ®Google Scholar

A. Liu, H. Zhu, Z. Guo, Y. Meng, G. Liu, E. Fortunato, R. Martins, and F. Shan, Adv. Mater. 29, 1701599 (2017).

 Web of Science ®Google Scholar

A. Zavabeti, P. Aukarasereenont, H. Tuohey, N. Syed, A. Jannat, A. Elbourne, K.A. Messalea, B.Y. Zhang, B.J. Murdoch, and J.G. Partridge, Nat. Electron. 4, 277 (2021).

 Web of Science ®Google Scholar

C. Zhao, C. Tan, D.-H. Lien, X. Song, M. Amani, M. Hettick, H.Y.Y. Nyein, Z. Yuan, L. Li, and M.C. Scott, Nat. Nanotechnol. 15, 53 (2020).

 PubMed Web of Science ®Google Scholar

T. Kim, C.H. Choi, P. Byeon, M. Lee, A. Song, K.-B. Chung, S. Han, S.-Y. Chung, K.-S. Park, and J.K. Jeong, npj 2D Mater. Appl. 6, 4 (2022).

 Google Scholar

T. Matsushima, S. Hwang, A.S. Sandanayaka, C. Qin, S. Terakawa, T. Fujihara, M. Yahiro, and C. Adachi, Adv Mater 28, 10275 (2016).

 PubMed Web of Science ®Google Scholar

Y. Li, K. Cui, X. Xu, J. Chen, Y. Liu, J. Wu, S. Lu, W. Qin, and X. Wu, The J. Phys. Chem. C 124, 15107 (2020).

 Web of Science ®Google Scholar

X. Hu, H. Zhou, Z. Jiang, X. Wang, S. Yuan, J. Lan, Y. Fu, X. Zhang, W. Zheng, X. Wang, X. Zhu, L. Liao, G. Xu, S. Jin, and A. Pan, ACS Nano 11, 9869 (2017).

 PubMed Web of Science ®Google Scholar

L. Tang, Y. Peng, Z. Zhou, Y. Wu, J. Xu, J. Li, Y. Du, L. Huang, H. Cai, J. Ni, and J. Zhang, Appl. Phy. A 124, 624 (2018).

 Google Scholar

W. Yu, F. Li, L. Yu, M.R. Niazi, Y. Zou, D. Corzo, A. Basu, C. Ma, S. Dey, M.L. Tietze, U. Buttner, X. Wang, Z. Wang, M.N. Hedhili, C. Guo, T. Wu, and A. Amassian, Nat. Commun 9, 5354 (2018).

 PubMedGoogle Scholar

J. Wang, S.P. Senanayak, J. Liu, Y. Hu, Y. Shi, Z. Li, C. Zhang, B. Yang, L. Jiang, D. Di, A.V. Ievlev, O.S. Ovchinnikova, T. Ding, H. Deng, L. Tang, Y. Guo, J. Wang, K. Xiao, D. Venkateshvaran, L. Jiang, D. Zhu, and H. Sirringhaus, Adv. Mater 31, e1902618 (2019).

 PubMedGoogle Scholar

T. Matsushima, M.R. Leyden, T. Fujihara, C. Qin, A.S.D. Sandanayaka, and C. Adachi, Appl. Phys. Lett., 115 (2019).

 Google Scholar

H. Shen, J. Li, H. Wang, J. Ma, J. Wang, H. Luo, and D. Li, J Phys Chem Lett 10, 7 (2019).

 PubMed Web of Science ®Google Scholar

Y. Meng, C. Lan, F. Li, S. Yip, R. Wei, X. Kang, X. Bu, R. Dong, H. Zhang, and J.C. Ho, ACS Nano 13, 6060 (2019).

 PubMed Web of Science ®Google Scholar

J. Li, Z. Zhou, Y. Peng, J. Zhang, N. Guo, and Y. Sun, Org. Electron., 84 (2020).

 Web of Science ®Google Scholar

A.N. Aleshin, I.P. Shcherbakov, O.P. Chikalova-Luzina, L.B. Matyushkin, M.K. Ovezov, A.M. Ershova, I.N. Trapeznikova, and V.N. Petrov, Synth. Metals 260 (2020).

 Google Scholar

H. Zhu, A. Liu, K.I. Shim, J. Hong, J.W. Han, and Y.Y. Noh, Adv Mater 32, e2002717 (2020).

 PubMedGoogle Scholar

S.P. Senanayak, M. Abdi-Jalebi, V.S. Kamboj, R. Carey, R. Shivanna, T. Tian, G. Schweicher, J. Wang, N. Giesbrecht, D. Di Nuzzo, H.E. Beere, P. Docampo, D.A. Ritchie, D. Fairen-Jimenez, R.H. Friend, and H. Sirringhaus, Sci Adv 6, eaaz4948 (2020).

 PubMedGoogle Scholar

N. Guo, J. Li, S. Yang, J. Zhang, J. Ni, and H. Cai, Nanotechnology 32 (2021).

 Google Scholar

S. Shao, W. Talsma, M. Pitaro, J. Dong, S. Kahmann, A.J. Rommens, G. Portale, and M.A. Loi, Adv. Funct. Mater. 31, 2008478 (2021).

 Google Scholar

A. Liu, H. Zhu, S. Bai, Y. Reo, T. Zou, M.-G. Kim, and Y.-Y. Noh, Nature Electron. 5, 78 (2022).

 Web of Science ®Google Scholar

H. Zhu, A. Liu, K.I. Shim, H. Jung, T. Zou, Y. Reo, H. Kim, J.W. Han, Y. Chen, H.Y. Chu, J.H. Lim, H.J. Kim, S. Bai, and Y.Y. Noh, Nat Commun 13, 1741 (2022).

 PubMedGoogle Scholar

Y. Liu, P.A. Chen, X. Qiu, J. Guo, J. Xia, H. Wei, H. Xie, S. Hou, M. He, X. Wang, Z. Zeng, L. Jiang, L. Liao, and Y. Hu, iScience 25, 104109 (2022).

 PubMedGoogle Scholar

G. Abiram, F.H. Gourji, S. Pitchaiya, P. Ravirajan, T. Murugathas, and D. Velauthapillai, Sci Rep 12, 2455 (2022).

 PubMedGoogle Scholar

B. Jeong, L. Veith, T. Smolders, M.J. Wolf, and K. Asadi, Adv Mater 33, e2100486 (2021).

 PubMedGoogle Scholar