Opto-electro-structural properties of Ge-doped Sb₆₅Se₃₅ alloys

Figures & data

Figure 1. XRD patterns of polycrystalline Ge-doped Sb₆₅Se₃₅ (0 ≤ x ≤ 20) alloys.

Table 1. EDS, XRD and optical band gap results of the synthesized alloys.

Type	Sb	Se	Ge	Cs (nm)	δ*10^11 cm^−2	Eopt (eV)
G0	64.62	35.38	0.00	82.9	12.06	1.18
G1	64.77	30.27	4.96	90.3	11.07	1.48
G2	63.98	25.73	10.29	76.2	13.12	0.48
G3	64.61	19.67	14.72	72.4	13.81	0.64
G4	63.99	15.30	20.71	62.8	15.92	0.98

Figure 2. FE-SEM images of the samples were recorded with 20 K x magnification.

Figure 3. EDS spectra corresponding to the specimens.

Figure 4. Raman spectra of Ge-incorporated Sb₆₅Se₃₅ (0 ≤ x ≤ 20) samples.

Table 2. The characteristic parameters of each mode, including relative area (A), maximum point position (C), peak widening (W), and relative intensity (I/I_o) of Raman peaks of compositions.

G0				G1					G2				G3				G4
A	C	W	I/Io	A	C	W	I/Io	A	C	W	I/Io	A	C	W	I/Io	A	C	W	I/Io
100	98.9	16	92	64	98.4	16.1	58	98	97.9	14.1	100	71	97.2	13.1	78	77	97.3	12.8	87
10	148.6	9.3	16	6.5	148	9.5	10	16	151	12.1	19	15	152	12.7	17	23	153	16.4	20
24	189.8	17	21	18	189	48.3	5.4	Shoulder				Shoulder				25	181	36.2	9.9

Figure 5. Wavelength dependence of the reflectance for all compositions.

Figure 6. The relationship between the absorption coefficient and energy for various alloys.

Figure 7. Electrical conductivity (σ) as a function of temperature for various compounds.