Applications of the image processing method on the structure measurements in porous GaN

Figures & data

Figure 1. Schematic of UV-assisted electrochemical etching apparatus.

Figure 2. Flowchart of the MATLAB program.[14]

Figure 3. SEM images of different samples: (a) as grown (b) 20 mA/cm² (c) 40 mA/cm² and (d) 60 mA/cm².

Figure 4. Image processing results of porous GaN structures.

Figure 5. The percentage of pores in different diameters of the samples etched under different anodisation current densities.

Ahmed NM, Ramizy A, Hassan Z, Amer A, Omar K. Al-Douri Y, Alattas OS. Nano and micro porous GaN characterization using image processing method. Optik – Int J Light Electron Opt. 2012;123:1074–1078.

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