Figures & data
Figure 1. Structure of the fluorine-based block-co-polymer used as a precursor for the preparation of TFD-co-TFE films by wet chemical spin coating process
![Figure 1. Structure of the fluorine-based block-co-polymer used as a precursor for the preparation of TFD-co-TFE films by wet chemical spin coating process](/cms/asset/9e8f4065-d96d-4a43-a11f-7e7a709d3cef/tjen_a_193200_o_f0001g.gif)
Figure 2. Flow chart for the preparation and deposition of TFD-co-TFE thin films by wet chemical spin coating process
![Figure 2. Flow chart for the preparation and deposition of TFD-co-TFE thin films by wet chemical spin coating process](/cms/asset/6db7b780-0f04-455b-aea6-b62a78371aac/tjen_a_193200_o_f0002g.gif)
Figure 3. SEM image and EDX spectrum of TFD-co-TFE film deposited on Si(100) at room temperature by sol--gel spin coating process
![Figure 3. SEM image and EDX spectrum of TFD-co-TFE film deposited on Si(100) at room temperature by sol--gel spin coating process](/cms/asset/f7b5b47e-5258-488a-9edf-c84824dd1371/tjen_a_193200_o_f0003g.gif)
Figure 4. SEM image and EDX spectrum of TFD-co-TFE film deposited on Si(100) by sol--gel spin coating process and annealed at 400°C for 1 h
![Figure 4. SEM image and EDX spectrum of TFD-co-TFE film deposited on Si(100) by sol--gel spin coating process and annealed at 400°C for 1 h](/cms/asset/0f01cf86-696a-4936-bc11-399586a497da/tjen_a_193200_o_f0004g.gif)
Figure 5. SEM image of vertically aligned CNT on Ni nanoparticles on SiO2/Si substrate grown at 750°C by radio frequency pulsed plasma chemical vapor deposition technique
![Figure 5. SEM image of vertically aligned CNT on Ni nanoparticles on SiO2/Si substrate grown at 750°C by radio frequency pulsed plasma chemical vapor deposition technique](/cms/asset/c1b32ee9-61ab-4b74-81de-f96d338853a2/tjen_a_193200_o_f0005g.gif)
Figure 6. AFM topographical images of TFD-co-TFE thin films on Si(100) substrate by sol--gel spin coating process (a) As deposited (xerogel) film and (b) xerogel film annealed at 400°C/1 h (scan area 1 µm × l µm, Z axis = 100 nm)
![Figure 6. AFM topographical images of TFD-co-TFE thin films on Si(100) substrate by sol--gel spin coating process (a) As deposited (xerogel) film and (b) xerogel film annealed at 400°C/1 h (scan area 1 µm × l µm, Z axis = 100 nm)](/cms/asset/31b84f78-ce08-4b1d-8d3a-09fba4424834/tjen_a_193200_o_f0006g.gif)