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Original Articles

Preparation and tribological characteristics of sulfonated self-assembled monolayer of 3-mercaptopropyl trimethoxysilane TiO2 films

Pages 307-317 | Received 23 Jul 2008, Accepted 22 Sep 2008, Published online: 07 Jan 2009

Figures & data

Figure 1. Atomic force microscope images of (a) the hydroxide substrate (b) MPTS-SAM (c) and oxidised MPTS-SAM, and (d) TiO2 thin films.

Figure 1. Atomic force microscope images of (a) the hydroxide substrate (b) MPTS-SAM (c) and oxidised MPTS-SAM, and (d) TiO2 thin films.

Figure 2. Contact angle of hydroxide substrate and different SAMs.

Figure 2. Contact angle of hydroxide substrate and different SAMs.

Figure 3. Variation of adhesive forces of silicon substrate and TiO2 thin film under various humidity conditions.

Figure 3. Variation of adhesive forces of silicon substrate and TiO2 thin film under various humidity conditions.

Figure 4. Variation of friction forces of silicon substrate and TiO2 thin films under various humidity conditions (Load: 10 nN, Scanning speed: 10 Hz).

Figure 4. Variation of friction forces of silicon substrate and TiO2 thin films under various humidity conditions (Load: 10 nN, Scanning speed: 10 Hz).

Figure 5. Variation of adhesive forces of silicon substrate and TiO2 thin film with scanning speed (RH: 35%).

Figure 5. Variation of adhesive forces of silicon substrate and TiO2 thin film with scanning speed (RH: 35%).

Figure 6. Variation of friction forces of silicon substrate and TiO2 thin film with scanning speed (Load: 10 nN, RH: 35%).

Figure 6. Variation of friction forces of silicon substrate and TiO2 thin film with scanning speed (Load: 10 nN, RH: 35%).

Figure 7. Variation of adhesive forces of silicon substrate and TiO2 thin film with loads (RH: 35%).

Figure 7. Variation of adhesive forces of silicon substrate and TiO2 thin film with loads (RH: 35%).

Figure 8. Variation of friction forces of silicon substrate and TiO2 thin film with loads (Scanning speed: 10 Hz, RH: 35%).

Figure 8. Variation of friction forces of silicon substrate and TiO2 thin film with loads (Scanning speed: 10 Hz, RH: 35%).

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