Figures & data
Figure 1. Description of the etching process of the BDD film based on the use of a hybrid organic/mineral photoresist mask.
![Figure 1. Description of the etching process of the BDD film based on the use of a hybrid organic/mineral photoresist mask.](/cms/asset/f640aa6c-14f4-4d48-9d75-89806b47b65a/tnme_a_873830_f0001_c.jpg)
Figure 2. SEM image of a BDD film etched at 10 mTorr with a ratio Ar/O2=5/40 (sccm/sccm) and a RF power 100 W.
![Figure 2. SEM image of a BDD film etched at 10 mTorr with a ratio Ar/O2=5/40 (sccm/sccm) and a RF power 100 W.](/cms/asset/b7a21168-ad40-4697-b14e-f75b6f5d9e78/tnme_a_873830_f0002_c.jpg)
Figure 3. SEM images of a BDD film etched at 10 mTorr and 100 W with (a) Ar=11% vol. (ratio Ar/O2=5/40), (b) Ar=27% vol. (ratio Ar/O2=15/40) and (c) Ar=43% vol. (ratio Ar/O2=30/40 (sccm/sccm)).
![Figure 3. SEM images of a BDD film etched at 10 mTorr and 100 W with (a) Ar=11% vol. (ratio Ar/O2=5/40), (b) Ar=27% vol. (ratio Ar/O2=15/40) and (c) Ar=43% vol. (ratio Ar/O2=30/40 (sccm/sccm)).](/cms/asset/afef02c7-7fc0-4ba9-8821-f0c7e02a6499/tnme_a_873830_f0003_b.gif)
Figure 4. Effect of Ar content on the etch rate of the BDD film. O2 flux 40 sccm, RF power 100 W, pressure 10 mTorr, and etching time 10 min.
![Figure 4. Effect of Ar content on the etch rate of the BDD film. O2 flux 40 sccm, RF power 100 W, pressure 10 mTorr, and etching time 10 min.](/cms/asset/137dcb27-dd62-4db7-87c9-f4652a5d6a15/tnme_a_873830_f0004_c.jpg)
Figure 5. Effect of the RF power on the etch rate of the BDD film. Ar/O2=15/40 (sccm/sccm), pressure 10 mTorr and etching time 10 min.
![Figure 5. Effect of the RF power on the etch rate of the BDD film. Ar/O2=15/40 (sccm/sccm), pressure 10 mTorr and etching time 10 min.](/cms/asset/b565b823-265e-4ea1-b060-5a88d17e755f/tnme_a_873830_f0005_c.jpg)
Figure 6. SEM images of the etched film with Ar/O2 15/40 (sccm/sccm), pressure 10 mTorr, etching time 10 min and RF power 100 W (a) and 200 W (b).
![Figure 6. SEM images of the etched film with Ar/O2 15/40 (sccm/sccm), pressure 10 mTorr, etching time 10 min and RF power 100 W (a) and 200 W (b).](/cms/asset/3914e706-f2a8-4239-8c23-8262eae9e7de/tnme_a_873830_f0006_b.gif)
Figure 7. Effect of the pressure on the etching rate of BDD film (Ar/O2 15/40 (sccm/sccm), etching time 10 min and an RF power 100 W).
![Figure 7. Effect of the pressure on the etching rate of BDD film (Ar/O2 15/40 (sccm/sccm), etching time 10 min and an RF power 100 W).](/cms/asset/4300a61c-6f25-4da4-ad9c-9949a40a3d46/tnme_a_873830_f0007_c.jpg)