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Original Report

Temperature-dependent ion-beam mixing in amorphous SiOC/crystalline Fe composite

, , , &
Pages 198-203 | Received 01 Mar 2016, Accepted 30 Mar 2016, Published online: 21 Apr 2016

Figures & data

Figure 1. (a) A typical cross-sectional TEM image of the marker sample. (b) A schematic of how the incident Kr beam interacts with the marker sample. (c) SRIM-simulated Si and Fe recoil distribution profiles at the two Fe/SiOC interfaces by using the detailed calculation with full damage cascades option.

Figure 1. (a) A typical cross-sectional TEM image of the marker sample. (b) A schematic of how the incident Kr beam interacts with the marker sample. (c) SRIM-simulated Si and Fe recoil distribution profiles at the two Fe/SiOC interfaces by using the detailed calculation with full damage cascades option.

Figure 2. Typical cross-sectional bright-field TEM micrographs of marker specimen (a) before and after (b) 50 K, (c) 298 K, (d) 423 K, (e) 573 K irradiation. (f) The scanning transmission electron microscopy (STEM) image of marker specimen after 573 K irradiation.

Figure 2. Typical cross-sectional bright-field TEM micrographs of marker specimen (a) before and after (b) 50 K, (c) 298 K, (d) 423 K, (e) 573 K irradiation. (f) The scanning transmission electron microscopy (STEM) image of marker specimen after 573 K irradiation.

Figure 3. The typical EDS line scan yield of the Fe marker layer irradiated at different temperatures where a Gaussian function is used to fit these data.

Figure 3. The typical EDS line scan yield of the Fe marker layer irradiated at different temperatures where a Gaussian function is used to fit these data.

Figure 4. Summary of the amount of ion mixing as a function of irradiation temperature. The results suggest a thermally dependent demixing regime and a thermally independent mixing regime.

Figure 4. Summary of the amount of ion mixing as a function of irradiation temperature. The results suggest a thermally dependent demixing regime and a thermally independent mixing regime.