Relative stability of shielded top- and side-contact MLGNR interconnects

ABSTRACT

In a recent nano and deep-submicron regime, the electromagnetic interference primarily plays an important role in determining the overall interconnect performance of an integrated circuit (IC). For instance, it can cause lower reliability, and stability in silicon technology. In order to mitigate these challenges, this work introduces a new technique of active shielding by introducing a jacketed side- (SC) and top-contact (TC) multi-layered graphene nanoribbon (MLGNR) interconnect to demonstrate the relative stability. Depending on the physical configuration, an accurate Pi-type electrical network is proposed for the shielded TC-and SC-MLGNR at 32 nm technology. Using the equivalent circuit model, a fifth-order transfer function is employed to demonstrate the relative stability of SC- and TC-MLGNR at global interconnect lengths.

KEYWORDS:

• Relative stability
• multi-layered graphene nanoribbon (MLGNR)
• ABCD parameters
• side- and top-contact interconnect

Disclosure statement

No potential conflict of interest was reported by the authors.