The effects of zinc substitution on the electrical properties of MgNb₂O₆ thin films

Figures & data

Table 1. The grain sizes of the 500°C-annealed MZ_xNO films

x = 0	x = 0.2	x = 0.4	x = 0.6	x = 0.8	x = 1
-	9.35	11.76	12.66	14.97	17.15

Unit: nm

Figure 1. GIXRD patterns of MZxNO thin films

Figure 2. FESEM of the MZxNO samples annealed at (a) 400°C and (b) 500°C

Figure 3. J-E relations of the Al/MZxNO/ITO/glass MIM capacitors annealed at (a) 400 and (b) 500°C

Table 2. The area ratio of the XPS peaks of the 400°C-annealed MZ_xNO films

	Olattice	Onon-lattice	Nb^5+	Nb^4+
x = 0	95.72%	4.28%	86.20%	13.80%
x = 0.2	95.76%	4.04%	84.90%	15.10%
x = 0.6	95.07%	4.93%	83.90%	16.10%
x = 1	96.66%	3.34%	88%	12%

Figure 4. XPS core spectra of the (a) Mg 2p, (b) Zn 2p, (c) O 1s and (d) Nb 3d signals of the400°C-annealedMZxNO films

Figure 5. (a) Transmittance spectra and (b) bandgap plot of the MZxNO/quartz

Figure 6. (a) C-V and(b) tanδ-V relations of the Al/MZxNO/ITO/glass MIM capacitors annealed at 400°C

Figure 7. (a)C-f and(b) tanδ-f relations of the Al/MZxNO/ITO/glass MIM capacitors annealed at 400°C

Figure 8. SE and PFE plots of the Al/MZxNO/ITO/glass MIM capacitors annealed at 400°C

Figure 9. The double logarithmic I–V relations of the Al/MZxNO/ITO/glass MIM capacitors annealed at 400°C

Figure 10. The ln(J/E²)-1/E relations of the Al/MZxNO/ITO/glass MIM capacitors annealed at 400°C

Table 3. Summary of the conduction mechanisms of MZ_xNO samples

	Ohmic	SCLC	FN
x = 0	E < 80	80 < E < 250	E > 250
x = 0.2	E < 70	70 < E < 300	E > 300
x = 0.4	E < 220	220 < E < 450	E > 450
x = 0.6	E < 350	350 < E < 510	E > 510
x = 0.8	E < 340	E > 340
x = 1	E < 320	E > 320
Unit: kV/cm

Table 4. The calculated values of the band diagram and E_FN of the MZ_xNO samples

	Eg (eV)	EC^MNO-EF (eV)	EFN (kV/cm)
x = 0	4.95	1.40	250
x = 0.2	4.86	1.13	300
x = 0.6	4.74	0.77	510
x = 1	4.69	0.59	-

Figure 11. The valence band spectra of the 400°C-annealed MZxNO samples

Figure 12. The energy band diagram of the MZNO/ITO heterostructure