403
Views
0
CrossRef citations to date
0
Altmetric
Electrical & Electronic Engineering

Neural network detector with sparse codes for spin transfer torque magnetic random access memory

ORCID Icon
Article: 2231724 | Received 31 Dec 2022, Accepted 27 Jun 2023, Published online: 03 Jul 2023

Figures & data

Figure 1. STT-MRAM cell structure. a) 1 to 0 transition. b) 0 to 1 transition.

Figure 1. STT-MRAM cell structure. a) 1 to 0 transition. b) 0 to 1 transition.

Figure 2. Cascaded STT-MRAM model, for reading with write-0 direction. WEM: write error model; REM: read disturb error model; GMC: Gaussian mixture channel.

Figure 2. Cascaded STT-MRAM model, for reading with write-0 direction. WEM: write error model; REM: read disturb error model; GMC: Gaussian mixture channel.

Figure 3. Block diagram of system model.

Figure 3. Block diagram of system model.

Figure 4. Proposed architecture of MLP model.

Figure 4. Proposed architecture of MLP model.

Figure 5. BER of the MLP-based detector for each epoch during training.

Figure 5. BER of the MLP-based detector for each epoch during training.

Table 1. Parameters of the proposed MLP architecture

Figure 6. BER comparison without offset.

Figure 6. BER comparison without offset.

Figure 7. BER comparison, offset of μofs=0.2 and σofs/μ1=4%.

Figure 7. BER comparison, offset of μofs=−0.2kΩ and σofs/μ1=4%.

Figure 8. BER comparison, offset of μofs=0.2 and σofs/μ1=4%.

Figure 8. BER comparison, offset of μofs=−0.2kΩ and σofs/μ1=4%.

Table 2. BER comparison for offset of μofs=0.2kΩ and σofs/μ1=4% between pearson-based decoding and Euclidean-based decoding

Table 3. BER comparison between the proposed model and ref [27] at offset of μofs=0.2kΩ and σofs/μ1=4%