Advanced search
Publication Cover
Cogent Physics Volume 3, 2016 - Issue 1
Journal homepage
1,444
Views
30
CrossRef citations to date
0
Altmetric
Review Article

Thermoelectric properties of new Bi-chalcogenide layered compounds

Yoshikazu MizuguchiDepartment of Electrical and Electronic EngineeringTokyo Metropolitan University, 1-1, Minami-osawa, Hachioji192-0397, JapanCorrespondence[email protected]
View further author information
,
Atsuhiro NishidaDepartment of Electrical and Electronic EngineeringTokyo Metropolitan University, 1-1, Minami-osawa, Hachioji192-0397, Japan
,
Atsushi OmachiDepartment of Electrical and Electronic EngineeringTokyo Metropolitan University, 1-1, Minami-osawa, Hachioji192-0397, Japan
&
Osuke MiuraDepartment of Electrical and Electronic EngineeringTokyo Metropolitan University, 1-1, Minami-osawa, Hachioji192-0397, Japan
|
Naurang L. SainiUniversita degli Studi di Roma La Sapienza, Italy
(Reviewing Editor)
Article: 1156281 | Received 27 Dec 2015, Accepted 12 Feb 2016, Published online: 25 Apr 2016

Figures & data

Figure 1. Schematic images of the crystal structure of various Bi-chalcogenide compounds. ((a)–(c)) Typical BiS2-based compounds: (a) REOBiCh2 (RE: rare earth or Bi; Ch: S, Se) (Maziopa et al., Citation2014; Mizuguchi, Demura, et al., Citation2012), (b) Eu3F4Bi2Ch4 (Zhai, Zhang, et al., Citation2014; Zhang et al., Citation2015), and (c) Bi4O4SO4Bi2S4 (Mizuguchi, Fujihisa, et al., Citation2012). The electrically conducting layer of these compounds is the two-layer-type Bi2S4 layer. (d) LaOM2S3 (M: Bi, Pb) (Sun et al., Citation2014). The M4S6 conducting layer of LaOM2S3 is similar to the Bi4Te6 layer of (e) CsBi4Te6 (Chung et al., Citation2000).

Note: The crystal structure images were prepared using VESTA software (Momma & Izumi, Citation2008).
Figure 1. Schematic images of the crystal structure of various Bi-chalcogenide compounds. ((a)–(c)) Typical BiS2-based compounds: (a) REOBiCh2 (RE: rare earth or Bi; Ch: S, Se) (Maziopa et al., Citation2014; Mizuguchi, Demura, et al., Citation2012), (b) Eu3F4Bi2Ch4 (Zhai, Zhang, et al., Citation2014; Zhang et al., Citation2015), and (c) Bi4O4SO4Bi2S4 (Mizuguchi, Fujihisa, et al., Citation2012). The electrically conducting layer of these compounds is the two-layer-type Bi2S4 layer. (d) LaOM2S3 (M: Bi, Pb) (Sun et al., Citation2014). The M4S6 conducting layer of LaOM2S3 is similar to the Bi4Te6 layer of (e) CsBi4Te6 (Chung et al., Citation2000).

Figure 2. ((a)–(c)) Temperature dependences of (a) electrical resistivity (ρ), (b) Seebeck coefficient (S), and (c) power factor (PF) for LaO1−xFxBiS2. (d) Schematic image of the crystal structure of LaO1−xFxBiS2 and electron doping scenario.

Source: Refer Omachi, Kajitani, et al. (Citation2014) (J. Appl. Phys. 115, 083909 (2014)) for original data.
Figure 2. ((a)–(c)) Temperature dependences of (a) electrical resistivity (ρ), (b) Seebeck coefficient (S), and (c) power factor (PF) for LaO1−xFxBiS2. (d) Schematic image of the crystal structure of LaO1−xFxBiS2 and electron doping scenario.

Figure 3. ((a)–(c)) Temperature dependences of (a) electrical resistivity (ρ), (b) Seebeck coefficient (S), and (c) power factor (PF) for LaOBiS2−xSex. (d) Schematic image of the crystal structure of LaOBiS2−xSex and the definitions of the Ch1 and Ch2 sites.

Source: Refer Mizuguchi et al. (Citation2014) (J. Appl. Phys. 116, 163915 (2014)) for original data.
Figure 3. ((a)–(c)) Temperature dependences of (a) electrical resistivity (ρ), (b) Seebeck coefficient (S), and (c) power factor (PF) for LaOBiS2−xSex. (d) Schematic image of the crystal structure of LaOBiS2−xSex and the definitions of the Ch1 and Ch2 sites.

Figure 4. (a) XRD patterns for hot-pressed (HP) LaOBiSSe (x = 1). The Miller indices are shown with the top profile. The asterisk indicates the impurity (La2O3: 7% against the major phase) peak. To investigate the crystal structure anisotropy, XRD measurements were performed for polished pellets with two scattering vectors of P// and P⊥. (b) Schematic image for the definitions of the measurement directions of P// and P⊥ and the hot-pressing direction. ((c)–(f)) Temperature dependences of (c) electrical resistivity (ρ), (d) Seebeck coefficient (S), (e) thermal conductivity (κ), and dimensionless figure-of-merit (ZT) for HP-LaOBiSSe.

Source: Refer Nishida, Miura, et al. (Citation2015) (Appl. Phys. Express 8, 111801 (2015)) for original data.
Figure 4. (a) XRD patterns for hot-pressed (HP) LaOBiSSe (x = 1). The Miller indices are shown with the top profile. The asterisk indicates the impurity (La2O3: 7% against the major phase) peak. To investigate the crystal structure anisotropy, XRD measurements were performed for polished pellets with two scattering vectors of P// and P⊥. (b) Schematic image for the definitions of the measurement directions of P// and P⊥ and the hot-pressing direction. ((c)–(f)) Temperature dependences of (c) electrical resistivity (ρ), (d) Seebeck coefficient (S), (e) thermal conductivity (κ), and dimensionless figure-of-merit (ZT) for HP-LaOBiSSe.

Figure 5. ((a)–(c)) Temperature dependences of (a) electrical resistivity (ρ), Seebeck coefficient (S), and power factor (PF) for CeO1−xFxBiS2. ((d)–(f)) Temperature dependences of (d) ρ, (e) S, and (f) PF for NdO1−xFxBiS2.

Note: NdOBiS2 (x = 0) was not obtained with the solid-state reaction synthesis.
Figure 5. ((a)–(c)) Temperature dependences of (a) electrical resistivity (ρ), Seebeck coefficient (S), and power factor (PF) for CeO1−xFxBiS2. ((d)–(f)) Temperature dependences of (d) ρ, (e) S, and (f) PF for NdO1−xFxBiS2.

Figure 6. Temperature dependences of (a) electrical resistivity (ρ) and (b) Seebeck coefficient (S) for EuFBiS2. (c) Schematic image of the crystal structure of EuFBiS2.

Source: Refer Goto et al. (Citation2015) (Journal of the Physical Society of Japan, 84, 085003 (2015)) for the original data for Figure ((a), (b)).
Figure 6. Temperature dependences of (a) electrical resistivity (ρ) and (b) Seebeck coefficient (S) for EuFBiS2. (c) Schematic image of the crystal structure of EuFBiS2.

Figure 7. ((a)–(c)) Temperature dependences of (a) electrical resistivity (ρ), Seebeck coefficient (S), and power factor (PF) for LaOBiPbS3. (d) Schematic image of the crystal structure of LaOBiPbS3.

Figure 7. ((a)–(c)) Temperature dependences of (a) electrical resistivity (ρ), Seebeck coefficient (S), and power factor (PF) for LaOBiPbS3. (d) Schematic image of the crystal structure of LaOBiPbS3.

Figure 8. The Seebeck coefficient (S) for several Bi-chalcogenide samples (parent phases) are plotted as a function of the carrier concentration (n) (log scale for n).

Figure 8. The Seebeck coefficient (S) for several Bi-chalcogenide samples (parent phases) are plotted as a function of the carrier concentration (n) (log scale for n).

Related research

People also read lists articles that other readers of this article have read.

Recommended articles lists articles that we recommend and is powered by our AI driven recommendation engine.

Cited by lists all citing articles based on Crossref citations.
Articles with the Crossref icon will open in a new tab.