Investigation on the influence of LaCl₃ concentration on the electrical conduction mechanism of chemical-bath deposited LaF₃/porous-silicon structure

Figures & data

Figure 1. Schematic drawing of a double-tank chamber for PS fabrication.

Figure 2. Double-tank chamber in upright position for chemical-bath deposition of LaF₃.

Figure 3. SEM image of a macro-porous Si sample (a) before (Ossicini, Pavesi, & Priolo, 2003) and (b) after deposition of LaF₃.

Figure 4. (a) EDX spectra and (b) elemental concentration of 0.4 M LaCl₃ samples with 600°C annealing temperature.

Figure 5. G-V variation of LaF₃ passivated 600°C annealed PS samples with (a) 0.2, (b) 0.4 and (c) 0.6 M LaCl₃ concentration for different frequencies.

Figure 6. Variation of conductance of 600°C annealed LaF₃ passivated PS sample with different LaCl₃ concentrations at the frequency of 1 kHz.

Figure 7. Variation of conductance with frequencies for LaF₃ passivated PS samples with 0.2 and 0.4 M LaCl₃ at 600°C annealing temperature.

Ossicini, S., Pavesi, L., & Priolo, F. (2003). Porous silicon (Vol. 194, pp. 75–122). Springer-Verlag Berlin Heidelberg.

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