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Review

Luminescent diamond composites

ORCID Icon, ORCID Icon, ORCID Icon & ORCID Icon
Pages 53-63 | Received 30 Mar 2022, Accepted 22 Apr 2022, Published online: 09 May 2022

Figures & data

Figure 1. The scheme of diamond composite preparation by embedding RE-based nanoparticles (EuF3) between two microcrystalline diamond layers on the silicon substrate [Citation66].

Figure 1. The scheme of diamond composite preparation by embedding RE-based nanoparticles (EuF3) between two microcrystalline diamond layers on the silicon substrate [Citation66].

Figure 2. SEM image of the cross-section of the diamond film with embedded EuF3 particles in the middle of the film (a). EDX mapping of elements across the same cross-section (b): green layer – silicon, blue layer – carbon, purple dots – europium (also shown by the arrow) [Citation66].

Figure 2. SEM image of the cross-section of the diamond film with embedded EuF3 particles in the middle of the film (a). EDX mapping of elements across the same cross-section (b): green layer – silicon, blue layer – carbon, purple dots – europium (also shown by the arrow) [Citation66].

Figure 3. The high-resolution PL spectrum (473 nm, R.T.) for the EuF3 component in the composite film (c), and PL decay of Eu related peak for EuF3 powder (red – 617 nm, blue – 612 nm, orange – 590 nm) and for the EuF3 - diamond composite (black line) after switching off the laser excitation. Red dotted lines show data fits with single exponential decay [Citation66].

Figure 3. The high-resolution PL spectrum (473 nm, R.T.) for the EuF3 component in the composite film (c), and PL decay of Eu related peak for EuF3 powder (red – 617 nm, blue – 612 nm, orange – 590 nm) and for the EuF3 - diamond composite (black line) after switching off the laser excitation. Red dotted lines show data fits with single exponential decay [Citation66].

Figure 4. (a) XRL spectrum of the pristine NaGdF4: Eu powder, (b) XRL spectra of composite Diamond-RE films with the increasing total concentration of NaGdF4: Eu nanoparticles by increasing the volume of applied 30 mg/ml suspension: x1 - 1 drop of the suspension, x2 - 2 drops, x3 - 3 drops, Inset (I) shows the series of peaks near 612 nm in a narrow wavelength range; Inset (II) – dependence of integrated XRL intensity in 600–620 nm range on the concentration of NaGdF4: Eu nanoparticles (dashed line – the guide for the eye) [Citation102].

Figure 4. (a) XRL spectrum of the pristine NaGdF4: Eu powder, (b) XRL spectra of composite Diamond-RE films with the increasing total concentration of NaGdF4: Eu nanoparticles by increasing the volume of applied 30 mg/ml suspension: x1 - 1 drop of the suspension, x2 - 2 drops, x3 - 3 drops, Inset (I) shows the series of peaks near 612 nm in a narrow wavelength range; Inset (II) – dependence of integrated XRL intensity in 600–620 nm range on the concentration of NaGdF4: Eu nanoparticles (dashed line – the guide for the eye) [Citation102].

Figure 5. (a) XRL spectrum of the obtained “Diamond-YAG:Ce” composite at RT; (b) excitation spectra of cerium 5d → 4f luminescence (550 nm) and SiV luminescence (738 nm) across the K-edge of yttrium; (c) luminescence decay kinetics of Ce3+ (530 and 600 nm) and SiV (738 nm) centers in the obtained “Diamond-YAG:Ce” composite material, excitation 19 keV, RT. Inset in (b) – normalized spectra of Ce3+ and SiV emission. The results in (c) for the best-suited fitting components are shown near experimental lines: the decay times, and the relative contribution of each component [Citation109].

Figure 5. (a) XRL spectrum of the obtained “Diamond-YAG:Ce” composite at RT; (b) excitation spectra of cerium 5d → 4f luminescence (550 nm) and SiV luminescence (738 nm) across the K-edge of yttrium; (c) luminescence decay kinetics of Ce3+ (530 and 600 nm) and SiV (738 nm) centers in the obtained “Diamond-YAG:Ce” composite material, excitation 19 keV, RT. Inset in (b) – normalized spectra of Ce3+ and SiV emission. The results in (c) for the best-suited fitting components are shown near experimental lines: the decay times, and the relative contribution of each component [Citation109].

Figure 6. Photographs of the “Diamond-GSAG:Ce” composite membranes (2 drops of Gd2.73Ce0.02Sc0.5Al4.75O12 dispersion) under standard indoor lighting (a) and in the dark under X-ray radiation (b), as well as the X-ray luminescence spectrum of the composite (1 and 2 drops of Gd2.73Ce0.02Sc0.5Al4.75O12, accordingly). Note (b) white speckles as artifacts caused by the exposure of photosensitive elements in the camera to X-rays. The inhomogeneity of luminescence in (b) is due to the inhomogeneity of the distribution of GSAG: Ce particles in the composite [Citation113].

Figure 6. Photographs of the “Diamond-GSAG:Ce” composite membranes (2 drops of Gd2.73Ce0.02Sc0.5Al4.75O12 dispersion) under standard indoor lighting (a) and in the dark under X-ray radiation (b), as well as the X-ray luminescence spectrum of the composite (1 and 2 drops of Gd2.73Ce0.02Sc0.5Al4.75O12, accordingly). Note (b) white speckles as artifacts caused by the exposure of photosensitive elements in the camera to X-rays. The inhomogeneity of luminescence in (b) is due to the inhomogeneity of the distribution of GSAG: Ce particles in the composite [Citation113].

Figure 7. (a,b) SEM images of diamond/SiC composite film deposited in CH4 (4 sccm)/H2 (400 sccm) mixture with added TMS gas (5 sccm). The inset corresponds to a cross-sectional SEM image. (c) Photoluminescent spectra of diamond/SiC composite films grown with different TMS gas flows, sample 1#: 0 sccm; sample 2#: 5sccm; sample 3#: 15 sccm; sample 4#: 30 sccm. Not a strong SiV PL peak at 738 nm. The presence of the SiV peak in sample #1 (no TMS) is caused by the etching of Si substrate with hydrogen plasma during the process of film deposition. The spectra are recorded under the excitation of a 532 nm laser [Citation120].

Figure 7. (a,b) SEM images of diamond/SiC composite film deposited in CH4 (4 sccm)/H2 (400 sccm) mixture with added TMS gas (5 sccm). The inset corresponds to a cross-sectional SEM image. (c) Photoluminescent spectra of diamond/SiC composite films grown with different TMS gas flows, sample 1#: 0 sccm; sample 2#: 5sccm; sample 3#: 15 sccm; sample 4#: 30 sccm. Not a strong SiV PL peak at 738 nm. The presence of the SiV peak in sample #1 (no TMS) is caused by the etching of Si substrate with hydrogen plasma during the process of film deposition. The spectra are recorded under the excitation of a 532 nm laser [Citation120].

Figure 8. (a) SEM image (SE mode) of polycrystalline diamond-Ge film grown by an MPCVD in CH4-H2-GeH4 mixture at substrate temperature 800 °C. Larger grains are Ge crystallites. (b) PL spectra with GeV band around 602 nm for the composites produced at different substrate temperatures of 750–950 °C. The PL spectra are normalized to the diamond Raman peak area and shifted vertically for clarity [Citation118].

Figure 8. (a) SEM image (SE mode) of polycrystalline diamond-Ge film grown by an MPCVD in CH4-H2-GeH4 mixture at substrate temperature 800 °C. Larger grains are Ge crystallites. (b) PL spectra with GeV band around 602 nm for the composites produced at different substrate temperatures of 750–950 °C. The PL spectra are normalized to the diamond Raman peak area and shifted vertically for clarity [Citation118].