Research on the epitaxial direction control and mechanism of polycrystalline diamond grains

Figures & data

Table 1. The summary of experimental condition variables for preferred orientation growth of diamond.

First group	Samples	S1	S2	S3
	N2 (%)	0
	O2 (%)	0	0.25	0.5
Second group	Samples	S4	S5	S6
	N2 (%)	0.01
	O2 (%)	0	0.25	0.5
Third group	Samples	S7	S8	S9
	N2 (%)	0.02
	O2 (%)	0	0.25	0.5

Figure 1. Surface morphology of silicon substrate after seeding (a) 5000 times and (b) 40000 times.

Figure 2. (a1) Grain morphology and (a2) film morphology and (a3) the transition region of discrete grains to film formation morphology of S1 sample; (b1) Grain morphology and (b2) film morphology and (b3) the transition region of discrete grains to film formation morphology of S2 sample; (c1) grain morphology and (c2) film morphology and (c3) the transition region of discrete grains to film formation morphology of S3 sample.

Figure 3. (a1) Grain morphology and (a2) film morphology and (a3) the transition region of discrete grains to film formation morphology of S4 sample; (b1) Grain morphology and (b2) film morphology and (b3) the transition region of discrete grains to film formation morphology of S5 sample; (c1) grain morphology and (c2) film morphology and (c3) the transition region of discrete grains to film formation morphology of S6 sample.

Figure 4. (a1) Grain morphology and (a2) film morphology and (a3) the transition region of discrete grains to film formation morphology of S7 sample; (b1) Grain morphology and (b2) film morphology and (b3) the transition region of discrete grains to film formation morphology of S8 sample; (c1) grain morphology and (c2) film morphology and (c3) the transition region of discrete grains to film formation morphology of S9 sample.

Figure 5. XRD test results (2θ mode) of (a) samples S1–S3, (b) samples S4–S6, and (c) samples S7–S9.

Figure 6. Raman spectrum test results of (a) samples S1–S3, (b) samples S4–S6, and (c) samples S7–S9.