Superconductivity in carrier-doped silicon carbide

Figures & data

Figure 1 (a) Unit cell of cubic 3C-SiC. (b) Four unit cells of hexagonal 6H–SiC. For the drawings the software Vesta was used [20].

Figure 2 Temperature dependence of dc magnetic susceptibility in 3C-SiC:B and 6H-SiC.

Figure 3 Magnetization versus magnetic field in (a) 3C-SiC:B and (b) 6H-SiC.

Figure 4 Temperature dependence of resistivity in 3C-SiC:B and 6H-SiC:B. The inset magnifies the region near T_c.

Figure 5 Temperature dependence of resistivity under different magnetic fields (T-scan) in (a) 3C-SiC:B and (b) 6H-SiC:B.

Figure 6 Magnetic field dependence of resistivity (H-scan) in (a) 3C-SiC:B and (b) 6H-SiC:B.

Figure 7 H–T phase diagram for (a) 3C-SiC:B and (b) 6H-SiC:B, determined from the onset of superconductivity in T-scan and H-scan of resistivity.

Figure 8 Temperature dependence of dc magnetic susceptibility in SiC:Al. The inset shows magnetization versus magnetic field at T=0.45 K.

Figure 9 Temperature dependence of resistivity in 3C-SiC:Al. The inset magnifies the region near T_c.

Figure 10 (a) Temperature dependence of resistivity normalized by ρ₀ at different applied magnetic fields (0–400 Oe with a 20 Oe step) at 0.35–2 K (T-scan). (b) Magnetic field dependence of resistivity normalized by ρ₀ (0.35–1.0 K) at 0–400 Oe (H-scan).

Figure 11 Temperature dependence of the upper critical field H_c2 and of the irreversibility field H_irr in 3C-SiC:Al.

Parameters of the studied SiC:Al (this work and [38]), SiC:B [39], C:B [1, 5] and Si:B [4] samples.

	SiC:Al	SiC:B	C:B	Si:B
n (cm^−3)	7.06×10^20	1.91×10^21	1.80×10^21	2.80×10^21
γn (mJ molK^−2)	0.35	0.294	0.113	–
ρ0 (mΩ cm)	0.746	0.06	2.5	0.13
RRR	5.3	10.0	0.9	1.2
Tc(onset) (K)	1.5	1.45	4.50	0.35
Hc(0) (Oe)	–	115	–	–
Hsc(0) (Oe)	–	80	–	–
Hc2(0) (Oe)	370	–	4.2×10^4	4000
kF (nm^−1)	2.8	3.8	3.8	–
m∗ (mel)	2.0	1.2	1.7	–
vF(m s^−1)	1.6×10^5	3.8×10^5	–	–
l (nm)	2.2	14	0.34	–
ξ(0) (nm)	148	360	80(9)	(20)
λ(0) (nm)	281	130	160	–
κGL	1.8	0.35	2(18)	–

Ionization energies E_A of acceptors in p-type semiconductors, as well as ξ, κ_GL and the superconductivity (SC) type in doped semiconductors.

	EA(eV)	ξ(0)(nm)	κGL	SC type	Reference
B in Si	0.045	20	–	type-II	[4]
B in C	0.37	80	2(18)	type-II	[1–3]
Al in SiC	∼0.25	148	1.8	type-II	This work
B in SiC	∼0.29	360	0.35	type-I	[19]

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