Synthesis of ZnO nanowire array film on Mg doped gallium nitride substrate

Abstract

ZnO nanowire array films, composed of well aligned ZnO nanowires ∼200 nm in diameter and 1 μm in length, were successfully synthesised on Mg doped gallium nitride by hydrothermal method. In addition, the films possess quite flatten surface. In the synthesised process, there was no catalyst that had been used. Growth conditions were comprehensively discussed in the process of aqueous solution method. It was found that the length of ZnO nanowires and the thickness of the film could be tunable by altering solution concentration and growth time. Such ZnO film assembled with vertically aligned nanowire may have potential applications as UV light emitting diodes.

Keywords:

• ZnO nanowires
• ZnO film
• Metal organic chemical vapour deposition
• Gallium nitride

Acknowledgements

This work is supported by the National Natural Science Foundation of China (grant no. 61405076), the Hubei Province Science Fund (grant nos. 2008CDB334 and 2011CDB049), the Starting Research Fund from the Jianghan University (grant no. 2012017) and the Open Project of State Key Laboratory of Functional Materials for Informatics.