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Original Articles

Optically detected magnetic resonance (O.D.M.R.) investigations of recombination processes in semiconductors

Pages 475-538 | Received 12 Feb 1981, Published online: 28 Jul 2006
 

Abstract

This review covers results of recent O.D.M.R. measurements of recombination processes in layered semiconductors, II–VI compounds, at dep traps and in amorphous compounds, and includes consideration of experimental aspects.

Based on unpublished invited paper presented at the International Conference on High Magnetic Field Measurements in Semiconductors, Oxford, 1978.

Based on unpublished invited paper presented at the International Conference on High Magnetic Field Measurements in Semiconductors, Oxford, 1978.

Notes

Based on unpublished invited paper presented at the International Conference on High Magnetic Field Measurements in Semiconductors, Oxford, 1978.

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