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Advances in Physics Volume 45, 1996 - Issue 2
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Original Articles

Plastic relaxation and relaxed buffer layers for semiconductor epitaxy

R. Beanland GMMTL Caswell, Towcester, Northants, NN12 8EQ, UK
,
D.J. Dunstan The Department of Physics, University of Surrey, Guildford, Surrey, GU2 5XH, UK
&
P.J. Goodhew The Department of Materials Science, University of Liverpool, Liverpool, L69 3BX, UK
Pages 87-146 | Received 13 Oct 1993, Accepted 29 Sep 1995, Published online: 14 Aug 2006
 
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Abstract

We present a critical review of the strategies used in the fabrication of mismatched semiconductor heterostructures. By using simple concepts derived from the Matthews model of misfit relief, we show how the relaxation of single layers and complex structures may be analysed and predicted. These techniques allow a broad view of the processes that take place in the relaxation of strained layers. This is followed by a discussion of how the relative misfits and thicknesses of different layers in a heterostructure may influence the behaviour and distribution of dislocations in the structure. Finally, we describe the historical development and status of the experimental work and development that has been carried out in this area.

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