Effect of composition and growth temperature on the dielectric properties of Pb(ScTa)_1−xTi_xO₃ (PSTT) thin films grown by MOCVD

C. H. Lin Department of Materials Science & Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois, 61801, USA

P. A. Friddle Department of Materials Science & Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois, 61801, USA

C. H. Ma Department of Materials Science & Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois, 61801, USA

Haydn Chen Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong

Abstract

Highly (002) textured Pb(ScTa)_1−xTi_xO₃ (PSTT) (with x = 0–0.3) thin films were grown on LaNiO₃ buffered Si substrates using metal-organic chemical vapor deposition (MOCVD) technique at temperatures ranging from 600 to 685°C. Dielectric properties showed strong dependency on the growth temperature and PT content. Ti addition acted as a “Curie” temperature shifter and increased the dielectric constants. Dielectric dispersion behavior was observed, along with a diffuse phase transition, characterizing the relaxor properties of PSTT.

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Effect of composition and growth temperature on the dielectric properties of Pb(ScTa)_1−xTi_xO₃ (PSTT) thin films grown by MOCVD

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Effect of composition and growth temperature on the dielectric properties of Pb(ScTa)1−xTixO3 (PSTT) thin films grown by MOCVD

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Effect of composition and growth temperature on the dielectric properties of Pb(ScTa)_1−xTi_xO₃ (PSTT) thin films grown by MOCVD