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Abstract
PZT thin films and Mg2TiO4 thin films were deposited by ultrasonic spraying MOCVD and their electrical properties were investigated. The dielectric constant(εr) of Mg2TiO4 films was about 14. The leakage current density of the Mg2TiO4 films were about 1.9×10−7A/cm2. Leakagecurrent density of PZT films was about 4.2×10−9A/cm2 at 10V and 1.07×10.−8A/cm2 at -10V. The remanent polarization of PZT films was about 20 μC/cm2 at ±5Voltage.