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Ferroelectrics Volume 260, 2001 - Issue 1
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Session B 2: Ferroelectric thin films

Growth of highly (100)-oriented Zr-rich PZT films on Pt/Ti/SiO2/Si substrates by a sol-gel process

Xiaorong Fu State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, 200050, Shanghai, P. R. China
,
Zhitang Song State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, 200050, Shanghai, P. R. China; Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China
,
Chenglu Lin State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, 200050, Shanghai, P. R. China
,
Helen. L. W. Chan Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China
&
Chung-Loong Choy Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China
Pages 175-181 | Received 03 Aug 2001, Published online: 25 Oct 2011
 
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Abstract

Highly (100)-oriented Zr-rich PZT 80/20 and PZT 85/15 films and randomly oriented PZT 70/30 films were successfully prepared on (111) Pt coated Si substrates by a sol-gel process followed by rapid thermal annealing at 700 °C for 200 s. The dielectric properties of the films were measured. The (100)-oriented PZT 85/15 film has higher 2Pr (41.4 μC/cm2) and 2Ec (111 kV/cm) than the random oriented PZT 70/30 film.

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