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Ferroelectrics Volume 260, 2001 - Issue 1
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Session B 2: Ferroelectric thin films

Effect of RuO2 electrode on polarization fatigue resistance of PbZr0.52Ti0.48O3 thin films

Bing Wang Department of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
,
Kin Wing Kwok Department of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
,
Helen Lai Wah Chan Department of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
,
Chung Loong Choy Department of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
&
Kwok Ying Tong Department of Electronic and Information Engineering, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
Pages 207-212 | Received 03 Aug 2001, Published online: 25 Oct 2011
 
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Abstract

Sol-gel derived lead zirconate titanate (PbZr0.52Ti0.48O3, PZT) films of thickness 300 nm were deposited on RuO2/SiO2/Si and Pt/Ti/SiO2/Si substrates. Either a ruthenium dioxide (RuO2) or platinum (Pt) top electrode was deposited on each film. The ferroelectric properties and the fatigue and current characteristics of the films were investigated. The film has a higher fatigue resistance but also a higher leakage current when one or both of the electrodes are made of RuO2. The RuO2/PZT/RuO2 film exhibits negligible polarization fatigue, while the polarization of the RuO2/PZT/Pt and Pt/PZT/RuO2 films decreases by about 40% after 109 switchings. This suggests that the polarization fatigue in the PZT films is controlled not only by the top RuO2/PZT interface but also by the bottom PZT/RuO2 interface.

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