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Session B 2: Ferroelectric thin films

Nano-phase ferroelectric arrays for Gbit devices

Pages 305-320 | Received 03 Aug 2001, Published online: 25 Oct 2011
 

Abstract

I discuss preparation of nano-phase ferroelectrics for gigabit memories and emphasise three physics aspects: The lack of confinement energies in these materials (which is a blessing, because it means contact potentials at the metal electrode interfaces are size-independent); the enhanced leakage currents in nano-crystals as compared with macroscopic crystals; and the retention failure due to nucleation of revered-polarity 180-degree domains at twin boundaries.

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