Switching in ferroelectric thin film: Simulation with heterogeneous nucleation

Abstract

By using a kinetic Ising model the domain growth and switching current of ferroelectric thin film were simulated. The nearest and the next-nearest interaction were considered. The switching current and the domain evolution of two nucleation types (the α-model and the β-model) were compared. Also the effect of the external electric field, the boundary condition, the grain size and the defect concentration were studied.

Keywords:

• Ferroelectrics
• Polarization switching
• Nucleation
• Domain growth
• Monte Carlo method