[3D] Nano-Scale Ferroelectric Devices for Memory Applications

Abstract

A description is presented of present efforts to make thin-films for ferroelectric memory devices into truly three-dimensional objects, such as nano-tubes, nano-rods, and nano-ribbons. These may have important applications for DRAM trenched capacitors. A summary of state-of-the-art magnetic RAM (MRAM) and ferroelectric FRAM devices is included.

Keywords:

• Nanoscale fabrication
• nano cells
• nano tubes
• nano ribbons
• nano rods
• nano ferroelectrics

Acknowledgment

This work was supported by the Cambridge-MIT Institute (CMI). It is a pleasure to acknowledge helpful discussions with M. Dawber, D. J. Jung, A. Ruediger, F. Morrison, L. Ramsay, J. Kut, M. Gregg, P. Littlewood, P. Chandra, and J. Robertson.