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Ferroelectrics Volume 317, 2005 - Issue 1
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Original Articles

Theoretical Description of Coercive Field Decrease in Ferroelectrics-Semiconductors with Charged Defects

Anna N. Morozovska V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, pr. Nauki 41, 03028, Kiev, Ukraine
Pages 37-42 | Received 19 Oct 2004, Published online: 09 Mar 2011
 
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Abstract

We have modified Landau-Ginsburg approach and shown that the macroscopic state of ferroelectric semiconductors with charged defects could be described by three coupled equations for three order parameters. The experimentally observed coercive field values well below the thermodynamic value and hysteresis loop deformations have been obtained in the framework of our model.

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