Terabit Per Square Inch Information Data Storage on Ferroelectrics with Low Bit Error Rate

The bit error rate was evaluated in ultrahigh-density ferroelectric data storage based on scanning nonlinear dielectric microscopy. Data bits were written on ferroelectric media in the form of the polarization direction of nanodomains. Information data were recorded on a LiTaO ₃ single-crystal at the density of 260 Gbit/inch² using the probe with the tip radius of 50 nm. There were no bit errors out of ten-thousand bits under the optimized conditions, thus bit error rate was less than 1 × 10⁻⁴. Sharp probes with the tip radius of 25 nm enabled recording at the density of 982 Gbit/inch² with a few bit errors.

Keywords:

• Data storage
• LiTaO₃

Acknowledgments

Paper originally presented at IMF-11, Iguassu Falls, Brazil, September 5–9, 2005;