Characteristics of Ferroelectric Logic Gates Using a SPICE-Based Model

A SPICE-based model of an n-channel ferroelectric field effect transistor has been developed based on both theoretical and empirical data. This model was used to generate the I-V characteristic of several logic gates. The use of ferroelectric field effect transistors in memory circuits is being developed by several organizations. The ability of FFETs to have different characteristics depending on the initial polarization can be used to create logic gates. These gates can have properties not available to standard CMOS logic gates, such as memory, reconfigurability and memory. This paper investigates basic properties of FFET logic gates.

Keywords:

• Ferroelectric
• logic gate
• SPICE mode

Acknowledgments

Paper originally presented at IMF-11, Iguassu Falls, Brazil, September 5–9, 2005.