Characterization of PLT Films Sputtered by Multi Element Metal Target

Paraelectric lead lanthanium titanate (PLT) thin films were deposited Pt/Ti/SiO₂/Si multilayer substrates by a multi element metal target using dc magnetron sputtering. The rate of each metal component area on multi element target was obtained by the modified Sigmund's method, suggesting sputtering yields for Pb, La, and Ti metals. A post annealing treatment was applied to all PLT thin films at the temperature ranges from 450°C to 750°C for crystallization into the cubic perovskite structure. The crystallization of PLT thin films was characterized by X-ray diffraction, and their compositions were analyzed by Auger electron spectroscopy. The temperature dependence of dielectric constant in PLT film at La content of 22 mol% had the broad peak at around 60°C, however, and the dielectric constant at La content of 28 mol% decreased slightly at the temperature range of 30∼ 120°C. The dielectric constant of the PLT films increased with La contents. The dielectric constant and loss tangent at the La concentration of 28 mol% on the annealing temperature of 650°C were around 904 and 0.023, respectively.

Keywords:

• Multi element metal target
• PLT
• paraelectrics
• dielectric properties
• DC magnetron sputtering

Acknowledgments

Paper originally presented at IMF-11, Iguassu Falls, Brazil, September 5–9, 2005.