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Ferroelectrics Volume 353, 2007 - Issue 1
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Original Articles

Pyroelectric LiTaO3 Thin Films Elaborated by RF Magnetron Sputtering on RuO2/SiNx

Philippe Combette Centre d'Electronique et de Micro-optoélectronique de Montpellier, Unité mixte de Recherche du CNRS n° 5507, Université Montpellier II, Place E. Bataillon, 34095, Montpellier cedex 05, France
,
Laurianne Nougaret Centre d'Electronique et de Micro-optoélectronique de Montpellier, Unité mixte de Recherche du CNRS n° 5507, Université Montpellier II, Place E. Bataillon, 34095, Montpellier cedex 05, France
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Brice Sorli Centre d'Electronique et de Micro-optoélectronique de Montpellier, Unité mixte de Recherche du CNRS n° 5507, Université Montpellier II, Place E. Bataillon, 34095, Montpellier cedex 05, France
&
Frédérique Pascal-delannoy Centre d'Electronique et de Micro-optoélectronique de Montpellier, Unité mixte de Recherche du CNRS n° 5507, Université Montpellier II, Place E. Bataillon, 34095, Montpellier cedex 05, France
Pages 233-241 | Received 05 Sep 2006, Accepted 01 Oct 2006, Published online: 08 Jun 2007
 
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Abstract

LiTaO 3 thin films were deposited on RuO 2 electrode by RF magnetron sputtering with a Li 2 O 2 /Ta 2 O 5 (50%–50%) target. This article presents a morphological, structural, dielectric and pyroelectric study of LiTaO 3 thin films. The originality of this work resides on the choice of the substrate: silicon nitride on Si (SiN x /Si) membrane. The final aim is to improve the pyroelectric coefficient for infrared pyroelectric detectors applications. The best pyroelectric coefficient of LiTaO 3 thin films (400 nm) is equal to 60 μC/m 2 K. It was obtained for deposited temperature of 400°C, and a pressure of 10 mTorr.

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