Abstract
This paper investigated the dielectrics properties of La-doped BaTiO3 sintered in pure nitrogen. The influence of variable doping concentration on microstructure and dielectric properties was studied. A new series of dielectrics with high permittivity of 160,000 ∼ 280,000 and low dissipation factor of 0.1 measured at 1 kHz, meeting the X8R specification of the Electronic Industries Association Standards (TCC within ± 15% from −55°C to +150°C) were obtained in this study. The doping mechanism of La-doped BaTiO3 was analyzed. The ceramics consisted of semiconducting grain cores with insulating grain boundaries, which is the origin of high permittivity.
Acknowledgments
This work was supported by the Ministry of Sciences and Technology of China through 973-project under grant 2002CB613302.