Fabrication and Characterization of Na-Doped (0.3)Pb(In_1/2Nb_1/2)O₃:(0.7)Pb(Mg_1/3Nb_2/3)O₃ Thin Films

Abstract

Perovskite-structured (0.3)Pb(In _1/2 Nb _1/2 )O ₃ :(0.7)Pb(Mg _1/3 Nb _2/3 )O ₃ thin films doped with 5% Na, thereafter abbreviated Na-PINM3070, was fabricated by pulsed-laser deposition. The film was epitaxially grown on La _0.7 Sr _0.3 MnO ₃ /LaAlO ₃ (LSMO/LAO) single crystal substrates. Hetero-epitaxial relationship between (001) _{Na−PINM3070} and (001) _LSMO ‖(001) _LAO was confirmed by x-ray diffractometry at 360° ϕ-scan and high-resolution TEM. Relative permittivity and loss-tangent, tanδ, were measured at room temperature, showing decreasing ϵ _r and increasing tanδ with increasing frequency. A slim ferroelectric hysteresis loop was also observed, confirming the relaxor ferroelectricity in [001]-oriented Na-PINM3070 films. The 1:1 structural long-range ordered domains of about 5 nm across in the Na-PINM3070 films were imaged using dark-field electron microscopy. The relationship between the relaxor properties and the order-disorder of the B-site cations is similar to other order-disorder complex perovskite relaxors.

Keywords:

• PMN
• PIN
• relaxors
• dielectrics
• thin film

Acknowledgments

This project was funded by grant B-Q891 and supported by the Centre of Smart Materials of The Hong Kong Polytechnic University.